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IRL3502 Datasheet(PDF) 2 Page - International Rectifier |
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IRL3502 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRL3502 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.008 VGS = 4.5V, ID = 64A ––– ––– 0.007 Ω VGS = 7.0V, ID = 64A VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 77 ––– ––– S VDS = 10V, ID = 64A ––– ––– 25 µA VDS = 20V, VGS = 0V ––– ––– 250 VDS = 10V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = -10V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 10V Qg Total Gate Charge ––– ––– 110 ID = 64A Qgs Gate-to-Source Charge ––– ––– 27 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 39 VGS = 4.5V, See Fig. 6 td(on) Turn-On Delay Time ––– 10 ––– VDD = 10V tr Rise Time ––– 140 ––– ns ID = 64A td(off) Turn-Off Delay Time ––– 96 ––– RG = 3.8Ω, VGS = 4.5V tf Fall Time ––– 130 ––– RD = 0.15Ω, Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 4700 ––– VGS = 0V Coss Output Capacitance ––– 1900 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 640 ––– ƒ = 1.0MHz, See Fig. 5 S D G S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 64A, VGS = 0V trr Reverse Recovery Time ––– 87 130 ns TJ = 25°C, IF = 64A Qrr Reverse RecoveryCharge ––– 200 310 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 110 420 A Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS nH LS Internal Source Inductance ––– 7.5 ––– LD Internal Drain Inductance ––– 4.5 ––– IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. I SD ≤ 64A, di/dt ≤ 86A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 190µH RG = 25Ω, IAS = 64A. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4 |
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