K4M28163PF-R datasheet(5/12 Pages) SAMSUNG

5 / 12 page

K4M28163PF - R(B)G/F

February 2004

Mobile-SDRAM

DC CHARACTERISTICS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85

°C for Extended, -25 to 70°C for Commercial)

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

Parameter

Symbol

Test Condition

Version

Unit

Note

-75

-90

-1L

Operating Current

(One Bank Active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

Precharge Standby Current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

0.3

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

0.3

Precharge Standby Current

in non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Active Standby Current

in power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

Active Standby Current

in non power-down mode

(One Bank Active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Operating Current

(Burst Mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

Refresh Current

ICC5

tARFC

≥ tARFC(min)

Self Refresh Current

ICC6

CKE

≤ 0.2V

Internal TCSR

Max 40

Max 85/70

°C

Full Array

100

250

1/2 of Full Array

210

1/4 of Full Array

190

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