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DG409LE Datasheet(PDF) 4 Page - Vishay Siliconix |
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DG409LE Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 18 page ![]() DG408LE, DG409LE www.vishay.com Vishay Siliconix S16-0389-Rev.A, 07-Mar-16 4 Document Number: 78084 For technical questions, contact: analogswitchsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Leakage parameters are guaranteed by worst case test condition and not subject to production test. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. R DS(on) = RDS(on) max. - RDS(on) min. h. Worst case isolation occurs on Channel 4 do to proximity to the drain pin. SPECIFICATIONS (Single Supply 12 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 12 V, ± 10 %, V- = 0 V VEN = 0.8 V or 2.4 V f TEMP. b TYP. d D SUFFIX -40 °C to +85 °C UNIT MIN. c MAX. c Analog Switch Analog Signal Range e VANALOG Full - 0 12 V Drain-Source On-Resistance RDS(on) VD = 10.8 V, VD = 2 V or 9 V, IS = 10 mA sequence each switch on Room 17 - 23 Full - - 27 RDS(on) Matching Between Channels g R DS VD = 10.8 V, VD = 2 V or 9 V IS = 10 mA Room 1 - 3 On-Resistance Flatness RFLAT(on) Room 3 6.5 Switch Off Leakage Current a IS(off) VEN = 0 V, VD = 11 V or 1 V VS = 1 V or 11 V Room - -1 1 nA Full - -5 5 ID(on) Room - -1 1 Full - -5 5 Channel On Leakage Current a ID(on) VS = VD = 1 V or 11 V Room - -1 1 Full - -5 5 Digital Control Logic High Input Voltage VINH Full - 2.4 - V Logic Low Input Voltage VINL Full - - 0.8 Input Current a IIN VAX = VEN = 2.4 V or 0.8 V Full - -1 1 μA Dynamic Characteristics Transition Time tTRANS VS1 = 8 V, VS8 = 0 V, (DG408LE) VS1b = 8 V, VS4b = 0 V, (DG409LE) see figure 2 Room 85 - 100 ns Full - - 110 Break-Before-Make Time tOPEN VS(all) = VDA = 5 V see figure 4 Room 34 1 - Full - - - Enable Turn-On Time tON(EN) VAX = 0 V, VS1 = 5 V (DG408LE) VAX = 0 V, VS1b = 5 V (DG409LE) see figure 3 Room 55 - 72 Full - - 82 Enable Turn-Off Time tOFF(EN) Room 36 - 47 Full - - 50 Charge Injection e (DG408LE) QCL = 1 nF, VGEN = 6 V, RGEN = 0 Room -11 - - pC Charge Injection e (DG409LE) Room -10 - - Off Isolation e, h (DG408LE) OIRR f = 100 kHz, RL = 50 Room -99 - - dB Off Isolation e, h (DG409LE) Room -87 - - Crosstalk e (DG408LE) XTALK Room -98 - - Crosstalk e (DG409LE) Room -109 - - Source Off Capacitance e (DG408LE) CS(off) f = 1 MHz, VS = 0 V, VEN = 0 V Room 5.5 - - pF Source Off Capacitance e (DG409LE) Room 5.5 - - Drain Off Capacitance e (DG408LE) CD(off) f = 1 MHz, VD = 2.4 V, VEN = 0 V Room 25 - - Drain Off Capacitance e (DG409LE) Room 13.5 - - Drain On Capacitance (DG408LE) CD(on) f = 1 MHz, VD = 0 V, VEN = 2.4 V (DG409LE only) Room 35 - - Drain On Capacitance e (DG409LE) Room 23.5 - - Power Supplies Power Supply Range V+ - 3 12 V Power Supply Current I+ VEN = VA = 0 V or 5 V Room 3.5 6 μA |
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