ZXMP3A13F datasheet(3/3 Pages) ZPSEMI

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PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

-30

ID=-250 A, VGS=0V

Zero Gate Voltage Drain Current

IDSS

-0.5

AVDS=-30V, VGS=0V

Gate-Body Leakage

IGSS

100

VGS= 20V, VDS=0V

Gate-Source Threshold Voltage

VGS(th)

-1.0

=-250 A, VDS=VGS

Static Drain-Source On-State Resistance (1) RDS(on)

0.210

0.330

VGS=-10V, ID=-1.4A

VGS=-4.5V, ID=-1.1A

Forward Transconductance (1)(3)

gfs

2.4

VDS=-15V,ID=-1.4A

DYNAMIC (3)

Input Capacitance

Ciss

206

VDS=-15V, VGS=0V,

f=1MHz

Output Capacitance

Coss

59.3

Reverse Transfer Capacitance

Crss

49.2

SWITCHING(2) (3)

Turn-On Delay Time

td(on)

1.5

VDD =-15V, ID=-1A

RG=6.0 ,VGS=-10V

Rise Time

3.0

Turn-Off Delay Time

td(off)

11.1

Fall Time

7.6

Gate Charge

3.8

VDS=-15V,VGS=-5V,

ID=-1.4A

Total Gate Charge

6.4

VDS=-15V,VGS=-10V,

ID=-1.4A

Gate-Source Charge

Qgs

0.69

Gate-Drain Charge

Qgd

2.0

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

-0.85

-0.95

TJ=25°C, IS=-1.1A,

VGS=0V

Reverse Recovery Time (3)

trr

15.6

TJ=25°C, IF=-0.95A,

di/dt= 100A/

μs

Reverse Recovery Charge (3)

Qrr

9.6

ELECTRICAL CHARACTERISTICS

(at TA = 25°C unless otherwise stated)

NOTES:

(1) Measured under pulsed conditions. Width

=300μs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ZXMP3A13F

30V P-CHANNEL ENHANCEMENT MODE MOSFET

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