LN100LA-G datasheet(2/6 Pages) SUTEX

2 / 6 page

LN100

Supertex inc.

www.supertex.com

Doc.# DSFP-LN100

A031414

Symbol

Parameter

Min

Typ

Max Unit Conditions

MOSFET M1 and M2

DSS1

Drain-to-Source breakdown voltage of M1

600

GS = 0V, ID = 1.0μA

DSS2

Drain-to-Source breakdown voltage of M2

600

GS = 0V, ID = 1.0μA

GS(th)

Gate-to-Source threshold voltage

0.5

1.6

GS = VDS, ID = 10μA

See test circuit

DS(ON)

Static Drain-to-Source On-State resistance

3.0

kΩ

GS = 2.8V, ID = 2.0mA

See test circuit

D(ON)

On-State Drain current

3.0

mA VGS = 2.8V, VDS = 25V

See test circuit

ISS

Input capacitance

GS = 0V, VDS = 25V

Zener Diode

M2 Gate-to-Source Zener diode clamp

6.5

GS = 1.0mA, VS = 0V

Gate-to-Source Zener diode leakage

100

GS = 4.5V

Maximum Zener current

mA ---

Resistors R

1, R2, and R3

1 + R2

Resistor divider R

1 + R2

MΩ V

1 = 0 to 1000V, V2 = 0V

Resistor R

MΩ V

R1 = 0 to 500V

Resistor R

MΩ V

R2 = 0 to 500V

Resistor R

kΩ

R3 = 0 to 5.0V

ΔR

1, R2, and R3 matching

±18

---

Electrical Characteristics

j = 25ºC unless otherwise specified)

Block Diagram

GATE

SOURCE

DRAIN

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