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3.2

Electrical Characteristics

Characteristic

Minimum

Typical

Maximum

Units

Nominal Frequency

f N

374.00

MHz

Insertion

Loss(including

matching

8.5

10.5

3 dB Bandwidth

20.5

MHz

Amplitude ripple (p-p)

f N±7MHz

0.5

Group delay ripple (p-p)

f N±7MHz

100

Triple transit suppression

Relative attenuation

309~352

MHz

352~357.5

MHz

390.5~392

MHz

392~396

MHz

396~439

MHz

439~454

MHz

Ultimate Rejection

Operating Temperature Range

-40

+85

℃

CAUTION: Electrostatic Sensitive Device. Observe precautions for handling

NOTES:

1.Frequency aging is the change in fc with time and is specified at +65℃or less. Aging may exceed

the specification for prolonged temperatures above +65℃. Typically, aging is greatest the first

year after manufacture, decreasing in subsequent years.

2.The frequency fc id the frequency of minimum IL with the resonator in the specified test fixture in a 50

W test system with VSWR £ 1.2 : 1. Typically, f

oscillator or ftransmitter is less than the resonator fc.

3.Typically, equipment utilizing this device requires emissions testing and government approval, which is

the responsibility of the equipment manufacturer.

4.Unless noted otherwise , case temperature Tc=+25℃±2℃.

5.The design, manufacturing process, and specifications of this device are subject to change without

notice.

6.Derived mathematically from one or more of the following directly measured parameters: fc, IL, 3 dB

bandwidth, fc versus Tc , and C0.

7.Turnover temperature, TO, is the temperature of maximum (or turnover) frequency, fO, The nominal

center frequency at any case temperature , TC, may be calculated from :f = f O［1-FTC (TO-T C)

2］.Typically, oscillator T

0is 20

o less than the specified resonator T

8.This equivalent RLC model approximates resonator performance near the resonant frequency and is

provided for reference only . The capacitance C0 is the measured static ( nonmotional ) capacitance

between either pin 1 and ground or pin 2 and ground .The measurement includes case parasitic

capacitance

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