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2SB1570 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB1570 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Darlington Power Transistor 2SB1570 DESCRIPTION · High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) · Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A · Complement to Type 2SD2401 · Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS · Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current- Continuous -1 A PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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