HFP7N60 datasheet(1/7 Pages) HUASHAN

Part #	HFP7N60

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	7 Pages

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co., Ltd.

N-Channel Enhancement Mode Field Effect Transistor

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General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, this advanced technology has been

especially tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche and commutation

mode . These devices are well suited for high efficiency switch mode power supply,

power factor correction, electronic lamp ballast based on half bridge.

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Features

•

7A, 600V(See Note), RDS(on) <1.2Ω@VGS = 10 V

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

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Maximum Ratings（Ta=25℃ unless otherwise specified）

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Thermal Characteristics

Symbol

Items

TO-220

Unit

Rthj-case

Thermal Resistance Junction-case

Max 0.85

℃

/W

Rthj-amb

Thermal Resistance Junction-ambient

Max 62.5

℃

/W

Tstg——Storage Temperature ------------------------------------------------------ -55~150℃

Tj ——Operating Junction Temperature -------------------------------------------------- 150℃

VDSS —— Drain-Source Voltage ----------------------------------------------------------600V

VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V

ID —— Drain Current (Continuous)(Tc=25℃)------------------------------------------------------------ 7A

IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 28A

PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 147W

Derate Above 25℃ ------------------------------------------------------------------------- 1.18W/℃

EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 420mJ

IAR—— Avalanche Current (Note 1) ------------------------------------------------------------------------- 7A

EAR —— Repetitive Avalanche Energy (Note 1) ----------------------------------------------------- 14.7mJ

dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------5.5V/ns

TO-220

1- G 2-D 3-S

HFP7N60

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HFP7N60 Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

HFP7N60 Datasheet(HTML) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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