BFP650F_13 datasheet(2/7 Pages) INFINEON

2 / 7 page

2013-09-06

BFP650F

Maximum Ratings

at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

TA = 25 °C

TA =-55 °C

VCEO

3.7

Collector-emitter voltage

VCES

Collector-base voltage

VCBO

Emitter-base voltage

VEBO

1.2

Collector current

150

Base current

Total power dissipation1)

TS ≤ 85°C

Ptot

500

Junction temperature

150

°C

Storage temperature

TStg

-55 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point2)

RthJS

130

K/W

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 3 mA, IB = 0

V(BR)CEO

4.5

Collector-emitter cutoff current

VCE = 13 V, VBE = 0

ICES

100

µA

Collector-base cutoff current

VCB = 5 V, IE = 0

ICBO

100

Emitter-base cutoff current

VEB = 0.5 V, IC = 0

IEBO

µA

DC current gain

IC = 80 mA, VCE = 3 V, pulse measured

hFE

110

180

270

1TS is measured on the emitter lead at the soldering point to the pcb

2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

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