BSC100N06LS3G datasheet(2/9 Pages) INFINEON

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BSC100N06LS3 G

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Power dissipation

P tot

T C=25 °C

T A=25 °C,

R thJA=50 K/W

2.5

Operating and storage temperature

T j, T stg

-55 ... 150

°C

IEC climatic category; DIN IEC 68-1

55/150/56

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

2.5

K/W

Device on PCB

R thJA

minimal footprint

6 cm

2 cooling area2)

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

Gate threshold voltage

V GS(th)

V DS=V GS, I D=23 µA

1.2

1.7

2.2

Zero gate voltage drain current

I DSS

V DS=60 V, V GS=0 V,

T j=25 °C

0.1

µA

V DS=60 V, V GS=0 V,

T j=125 °C

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

100

Drain-source on-state resistance

R DS(on)

V GS=4.5 V, I D=25 A

11.8

17.9

V GS=10 V, I D=50 A

7.8

Gate resistance

R G

1.3

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=50 A

Value

Values

Rev. 2.3

page 2

2013-05-21

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