2

650VCoolMOS™CFDAPowerTransistor

IPB65R660CFDA,IPP65R660CFDA

Rev.2.1,2014-11-19

Final Data Sheet

1

2

3

tab

D²PAK

tab

TO-220

Drain

Pin 2

Gate

Pin 1

Source

Pin 3

1Description

CoolMOS™isarevolutionarytechnologyforhighvoltagepower

MOSFETs,designedaccordingtothesuperjunction(SJ)principleand

pioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseries

combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh

classinnovation.Theresultingdevicesprovideallbenefitsofafast

switchingSJMOSFETwhileofferinganextremelyfastandrobustbody

diode.Thiscombinationofextremelylowswitching,commutationand

conductionlossestogetherwithhighestrobustnessmakeespecially

resonantswitchingapplicationsmorereliable,moreefficient,lighter,and

cooler.

Features

•Ultra-fastbodydiode

•Veryhighcommutationruggedness

•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss

•Easytouse/drive

•QualifiedaccordingtoAECQ101

•Greenpackage(RoHScompliant),Pb-freeplating,halogenfreeformold

compound

Applications

650VCoolMOS™CFDAisdesignedforswitchingapplications.

Table1KeyPerformanceParameters

Parameter

Value

Unit

650

V

RDS(on),max

0.66

Ω

Qg,typ

20

nC

ID,pulse

17

A

Eoss @ 400V

1.8

µJ

Body diode di/dt

900

A/µs

Qrr

0.2

µC

trr

65

ns

Irrm

4.5

A

Type/OrderingCode

Package

Marking

RelatedLinks

IPB65R660CFDA

PG-TO 263

IPP65R660CFDA

PG-TO 220

65F660A

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