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SPD15P10PLG Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPD15P10PLG Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 10 page  SPD15P10PL G SIPMOS ® Power-Transistor Features • P-Channel • Enhancement mode • logic level • Avalanche rated • Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=-15 A, R GS=25 mJ Gate source voltage V GS V Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 -15 11.3 128 Value 230 -60 55/175/56 -55 ... 175 ±20 260 °C 1C (1kV to 2kV) V DS -100 V R DS(on),max 0.20 I D -15 A Product Summary Type Package Marking Lead free Packing SP D15P10PL G PG-TO252-3 15P10PL Yes Non dry PG-TO252-3 Rev 1. 5 page 1 20 12-09-03 Qualified according to AEC Q101 |
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