CHARACTERISTICS

SYMBOL

RATING

UNIT

TO-220

Collector-Base Voltage

V

CBO

1050

V

Collector-Emitter Voltage

V

CEO

500

V

Emitter-Base Voltage

V

EBO

15

V

Collector Current(DC)

I

C

4A

Collector Current(Pulse)

I

CP

8A

Base Current

I

B

2A

Collector Dissipation(Tc=25

)

P

C

70

W

Junction Temperature

T

J

150

Storage Temperature

T

STG

-65~150

CHARACTERISTICS

SYMBOL

Test Condition

Min

Typ.

Max

Unit

Collector-Base Breakdown Voltage

V

CBO

I

1050

V

Collector-Emitter Breakdown Voltage

V

CEO

I

500

V

Emitter-Base Breakdown Voltage

V

EBO

I

15

19

24

V

Emitter Cut-off Current

I

EBO

V

1

DC Current Gain

h

FE1

h

FE2

V

V

48

25

75

100

50

Collector-Emitter Saturation Voltage

V

I

I

0.5

1.5

V

V

Base-Emitter Saturation Voltage

V

I

1.5

V

Output Capacitance

C

ob

V

36

Storage Time

t

stg

Ic=500mA, I

(UI9600)

27

Notes ;

1. Pulse Test: Pulse Width

NPN Silicon Power Transistor, VCBO= 1050V, VCEO= 500V, IC= 4A

KSP742C