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FERD30H100STS Datasheet(PDF) 1 Page - STMicroelectronics |
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FERD30H100STS Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() April 2016 DocID029159 Rev 1 1/14 This is information on a product in full production. www.st.com FERD30H100S 100 V field-effect rectifier diode Datasheet - production data Features ST advanced rectifier process Stable leakage current over reverse voltage Reduced leakage current Low forward voltage drop High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers. Table 1: Device summary Symbol Value IF(AV) 30 A VRRM 100 V VF (max.) 0.405 V IR (max.) 130 µA Tj (max.) 175 °C TO-220AB DPAK IPAK A K A K A A K K K K A A A K A |
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