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STGD6M65DF2 Datasheet(PDF) 19 Page - STMicroelectronics |
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STGD6M65DF2 Datasheet(HTML) 19 Page - STMicroelectronics |
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19 / 20 page ![]() STGD6M65DF2 Revision history DocID028703 Rev 3 19/20 5 Revision history Table 10: Document revision history Date Revision Changes 30-Nov-2015 1 First release. 13-Jan-2016 2 Modified: Table 4: "Static characteristics", Table 5: "Dynamic characteristics", Table 6: "IGBT switching characteristics (inductive load)" and Table 7: "Diode switching characteristics (inductive load)" Added: Section 2.1: "Electrical characteristics (curves)" Minor text changes 04-Aug-2016 3 Updated: Table 2: "Absolute maximum ratings", Table 4: "Static characteristics", Table 6: "IGBT switching characteristics (inductive load)",Table 7: "Diode switching characteristics (inductive load)". Updated Figure 9: "Forward bias safe operating area", Figure 12: "Normalized VGE(th) vs. junction temperature", Figure 20: "Short-circuit time and current vs. VGE",Figure 23: "Reverse recovery current vs. diode current slope". Changed:Figure 25: "Reverse recovery charge vs. diode current slope", and Figure 26: "Reverse recovery energy vs. diode current slope". Document status promoted from preliminary to production data. |
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