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STGP6M65DF2 Datasheet(PDF) 6 Page - STMicroelectronics |
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STGP6M65DF2 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 17 page  Electrical characteristics STGP6M65DF2 6/17 DocID028696 Rev 3 Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 6 A, VR = 400 V, VGE = 15 V (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 140 ns Qrr Reverse recovery charge - 210 nC Irrm Reverse recovery current - 6.6 A dIrr/dt Peak rate of fall of reverse recovery current during tb - 430 A/µs Err Reverse recovery energy - 16 µJ trr Reverse recovery time IF = 6 A, VR = 400 V, VGE = 15 V TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 200 ns Qrr Reverse recovery charge - 473 nC Irrm Reverse recovery current - 9.6 A dIrr/dt Peak rate of fall of reverse recovery current during tb - 428 A/µs Err Reverse recovery energy - 32 µJ |
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