STPSC15H12 datasheet(3/8 Pages) STMICROELECTRONICS

Part #	STPSC15H12

Description	1200 V power Schottky silicon carbide diode

PDF	8 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 8 page

STPSC15H12

Characteristics

DocID029174 Rev 1

3/8

1.1

Characteristics (curves)

Figure 1: Forward voltage drop versus forward

current (typical values)

Figure 2: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 3: Peak forward current versus case

temperature

Figure 4: Junction capacitance versus reverse

voltage applied (typical values)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VF(V)

Ta = 150 °C

Pulse test : tp= 500 µs

Ta = 25 °C

IF(A)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

100

200

300

400

500

600

700

800

900

1000

1100

1200

VR(V)

Tj= 25 °C

Tj= 150 °C

IR(µA)

100

120

140

100

125

150

175

Tc(°C)

= tp /T

δ = 0.1

δ = 0.3

δ = 0.5

δ = 1

δ = 0.7

IM(A)

200

400

600

800

1000

1200

0.1

1.0

10.0

100.0

1000.0

10000.0

VR(V)

F = 1 MHz

VOSC = 30 mVRMS

Tj = 25 °C

Cj(pF)

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