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FERD20H100SH Datasheet(PDF) 1 Page - STMicroelectronics |
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FERD20H100SH Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page  May 2016 DocID029022 Rev 2 1/15 This is information on a product in full production. www.st.com FERD20H100S 100 V field-effect rectifier diode Datasheet - production data Features ST advanced rectifier process Stable leakage current over reverse voltage Reduced leakage current Low forward voltage drop High frequency operation Insulated package TO-220FPAB : Insulated voltage : 2000 VRMS sine Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers. Table 1: Device summary Symbol Value IF(AV) 20 A VRRM 100 V VF (max.) 0.415 V IR (max.) 140 µA Tj (max.) 175 °C TO-220AB TO-220FPAB DPAK IPAK A K A A K A K A A K K K K A A A K A |
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