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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

Outline Drawing

Absolute Maximum Ratings

NOTES:

1. ALL DIMENSIONS IN INCHES [MILLIMETERS]

2. ALL TOLERANCES ARE ±0.001 (0.025)

3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND

4. BOND PADS ARE 0.004 (0.100) SQUARE

5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)

6. BACKSIDE METALLIZATION: GOLD

7. BOND PAD METALLIZATION: GOLD

Collector Bias Voltage

+7 Vdc

RF Input Power (RFiIN)(Vcc = +5 Vdc)

+10 dBm

Junction Temperature

150 °C

Continuous Pdiss (T= 85 °C)

(derate 5.21 mW/°C above 85 °C)

0.339 W

Thermal Resistance

(junction to die bottom)

192 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Standard

Alternate

GP-3 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

HMC405

v03.0109

InGaP HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 10 GHz