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SST49LF160C Datasheet(PDF) 2 Page - Microchip Technology

Part # SST49LF160C
Description  16 Mbit LPC Flash
PDF  37 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST49LF160C Datasheet(HTML) 2 Page - Microchip Technology

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©2016
DS20005099B
02/16
2
16 Mbit LPC Flash
SST49LF160C
EOL Data Sheet
Product Description
The SST49LF160C flash memory device is designed to interface with host controllers (chipsets) that
support a low-pin-count (LPC) interface for system firmware applications. The SST49LF160C device
complies with the LPC Interface Specification. The LPC interface operates with 5 signal pins versus 32
pins of a 8-bit parallel flash memory. This frees up pins on the ASIC host controller resulting in lower
ASIC costs and a reduction in overall system costs due to simplified signal routing.
The SST49LF160C uses a 5-signal LPC interface to support both in-system and rapid factory program-
ming using programmer equipment. A high voltage pin (WP#/AAI) is used to enable Auto Address
Increment (AAI) mode. The SST49LF160C offers hardware block protection in addition to individual
block protection via software registers for critical system code and data. A 256-bit Security ID space
with a 64-bit factory pre-programmed unique number and a 192-bit user programmable OTP area
enhances the user’s ability to use new security techniques and implement a new data protection
scheme. The SST49LF160C also provides general purpose inputs (GPI) for system design flexibility.
The SST49LF160C flash memory device is manufactured with SST’s proprietary, high-performance
SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain greater
reliability and manufacturability compared with alternative technology approaches. The SST49LF160C
device significantly improves performance and reliability, while lowering power consumption. The
SST49LF160C device writes (Program or Erase) in-system with a single 3.0-3.6V power supply. It uses
less energy during Erase and Program than alternative flash memory technologies.
The total energy consumed is a function of the applied voltage, current and time of application. Since
for any given voltage range, the SuperFlash technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or Program operation is less than alternative
flash memory technologies.
The SuperFlash technology provides fixed Erase and Program time, independent of the number of
Erase/Program cycles that have performed. Therefore the system software or hardware does not have
to be calibrated or correlated to the cumulative number of erase cycles as is necessary with alternative
flash memory technologies, whose Erase and Program time increase with accumulated Erase/Pro-
gram cycles. To protect against inadvertent write, the SST49LF160C device has on-chip hardware and
software write protection schemes. It is offered with a typical endurance of 100,000 cycles. Data reten-
tion is rated at greater than 100 years.
The SST49LF160C product provides a maximum program time of 10 µs per byte with a single-byte
Program operation; effectively 5 µs per byte with a dual-byte Program operation and 2.5 µs per byte
with a quad-byte Program operation. End-of-Write can be detected by the RY/BY# pin output in AAI
mode and by reading the software status register during an in-system Program or Erase operation.
The SST49LF160C is offered in a 32-PLCC lead-free package to address the growing need for non-Pb
solutions in electronic components. Non-Pb package versions can be obtained by ordering products
with a package code suffix of “E” as the environmental attribute in the product part number. See Figure
3 for pin assignments and Table 1 for pin descriptions.



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