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VP2450 Datasheet(PDF) 1 Page - Microchip Technology |
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VP2450 Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 14 page  2016 Microchip Technology Inc. DS20005569A-page 1 VP2450 Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • High Input Impedance and High Gain • Excellent Thermal Stability • Integral Source-drain Diode Applications • Motor Controls •Converters • Amplifiers • Switches • Power Supply Circuits • Drivers: Relays, Hammers, Solenoids, Lamps, Memory, Displays, Bipolar Transistors, etc. General Description The VP2450 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This Vertical DMOS Field-Effect Transistor (FET) is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Type TO-92 GATE SOURCE DRAIN GATE SOURCE DRAIN DRAIN SOT-89 See Table 3-1 for pin information. s P-Channel Enhancement-Mode Vertical DMOS FET |
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Similar Description - VP2450 |
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