IAM81008 datasheet(2/4 Pages) HP

2 / 4 page

7-120

IAM-81008 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Voltage

10 V

Power Dissipation2,3

300 mW

RF Input Power

+14dBm

LO Input Power

+14dBm

Junction Temperature

150

°C

Storage Temperature

–65 to 150

°C

Thermal Resistance:

jc = 80°C/W

Notes:

1. Permanent damage may occur if

any of these limits are exceeded.

2. TCASE = 25°C.

3. Derate at 4.4 mW/

°C for T

C > 82°C.

IAM-81008 Part Number Ordering Information

Part Number

Devices Per Reel

Reel Size

IAM-81008-TR1

1000

For more information, see “Tape and Reel Packaging for Semmiconductor Devices”.

IAM-81008 Electrical Specifications[1], T

A = 25°C

Symbol

Parameters and Test Conditions: V

cc = 5 V, ZO = 50 Ω, LO =–5 dBm, RF = –20 dBm

Units

Min.

Typ.

Max.

Conversion Gain

RF = 2 GHz, LO = 1.75 GHz

6.0

8.5

F3 dBRF

RF Bandwidth (GC 3 dB Down)

IF = 250 MHz

GHz

3.5

F3 dB IF

IF Bandwidth (GC 3 dB Down)

LO = 2 GHz

GHz

0.6

P1 dB

IF Output Power at 1 dB Gain Compression

RF = 2 GHz, LO = 1.75 GHz

dBm

–6

IP3

IF Output Third Order Intercept Point

RF = 2 GHz, LO = 1.75 GHz

dBm

SSB Noise Figure

RF = 2 GHz, LO = 1.75 GHz

RF Port VSWR

f = 0.05 to 3.5 GHz

1.5:1

VSWR

LO Port VSWR

f = 0.05 to 3.5 GHz

2.0:1

IF Port VSWR

f < 1 GHz

1.5:1

RFif

RF Feedthrough at IF Port

RF = 2 GHz, LO = 1.75 GHz

dBc

–25

LOif

LO Leakage at IF Port

LO = 1.75 GHz

dBm

–25

LOrf

LO Leakage at RF Port

LO = 1.75 GHz

dBm

–30

ICC

Supply Current

Note:

1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on

the following page.

IAM81008 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

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