71342LA55PFG datasheet(9/14 Pages) IDT

9 / 14 page

6.42

IDT71342SA/LA

High-Speed 4K x 8 Dual-Port Static RAM with Semaphore

Industrial and Commercial Temperature Ranges

CE or SEM

2721 drw 10

tAW

tAS

tWR

tDW

DATAIN

ADDRESS

tWC

tWP

tDH

DATAOUT

tWZ

(4)

tOW

tHZ

tLZ

tHZ

(9)

(6)

(7)

(2)

(3)

(7)

TIMING WAVEFORM OF WRITE CYCLE NO. 1, R/W CONTROLLED TIMING(1,5,8)

Timing Waveform of Write Cycle No. 2, CE Controlled Timing(1, 5)

NOTES:

1. R/W or CE must be HIGH during all address transitions.

2. A write occurs during the overlap (tEW or tWP) of either CE or SEM = VIL and R/W = VIL.

3. tWR is measured from the earlier of CE or R/W going HIGH to the end-of-write cycle.

4. During this period, the I/O pins are in the output state, and input signals must not be applied.

5. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.

6. Timing depends on which enable signal (CE or R/W) is asserted last.

7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load

(Figure 2).

8. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the bus

for the required tDW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP.

9. To access SRAM, CE =VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.

2721 drw 11

tWC

ADDRESS

DATAIN

CE or SEM

tDW

tWR

tDH

tEW

tAS

tAW

(9)

(6)

(2)

(3)

71342LA55PFG Datasheet(PDF) 9 Page - Integrated Device Technology

71342LA55PFG Datasheet(HTML) 9 Page - Integrated Device Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL