IRLI2910

PRELIMINARY

PD - 9.1384B

S

D

G

…

TO-220 FULLPAK

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

2.4

°C/W

Junction-to-Ambient

–––

65

°C/W

Thermal Resistance

Parameter

Max.

Units

31

22

A

Pulsed Drain Current

†

190

Power Dissipation

63

W

Linear Derating Factor

0.42

W/°C

Gate-to-Source Voltage

±16

V

Single Pulse Avalanche Energy

‚†

520

mJ

Avalanche Current

†

29

A

Repetitive Avalanche Energy



6.3

mJ

dv/dt

Peak Diode Recovery dv/dt

Ġ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

Fullpak is mounted to a heatsink using a single clip or by a

single screw fixing.

Description

3/16/98