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VUE 130-06NO7

B3

Three Phase Rectifier Bridge

with Fast Recovery Epitaxial Diodes (FRED)

in ECO-PAC 2

I

dAV

= 130 A

V

RRM

= 600 V

t

rr

= 35 ns

V

RSM

V

RRM

Typ

V

V

600

600

VUE 130-06NO7

Symbol

Conditions

Maximum Ratings

I

dAV

①

T

130

A

I

dAVM

130

A

I

FSM

T

t = 10 ms (50 Hz), sine

600

A

V

t = 8.3 ms (60 Hz), sine

640

A

T

t = 10 ms (50 Hz), sine

520

A

V

t = 8.3 ms (60 Hz), sine

555

A

T

t = 10 ms (50 Hz), sine

1800

V

t = 8.3 ms (60 Hz), sine

1720

T

t = 10 ms (50 Hz), sine

1350

V

t = 8.3 ms (60 Hz), sine

1295

T

VJ

-40...+150

°C

T

VJM

150

°C

T

stg

-40...+125

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

3000

V~

I

t = 1 s

3600

V~

M

d

Mounting torque (M4)

Weight

typ.

24

g

Features

• Package with DCB ceramic

base plate in low profile

• Isolation voltage 3000 V~

• Planar passivated chips

• Low forward voltage drop

• Leads suitable for PC board soldering

Applications

• Supplies for DC power equipment

• Input and output rectifiers for high

frequency

• Battery DC power supplies

• Field supply for DC motors

Advantages

• Space and weight savings

• Improved temperature and power

cycling capability

• Small and light weight

• Low noise switching

Data according to IEC 60747 refer to a single diode unless otherwise stated

① for resistive load at bridge output.

Dimensions in mm (1 mm = 0.0394")

Symbol

Conditions

Characteristic Values

typ.

max.

I

R

V

T

0.1

mA

V

T

2.5

mA

V

F

I

T

2.04

V

V

T0

for power-loss calculations only

1.09

V

r

T

4.3 m

Ω

R

thJC

per diode; DC current

0.8 K/W

R

thCH

per diode, DC current, typ.

0.2 K/W

I

RM

I

6.8

A

V

t

rr

I

35

ns

a

Max. allowable acceleration

50

d

S

creeping distance on surface (pin to heatsisnk)

11.2

mm

d

A

strike distance in air

(pin to heatsisnk)

9.7

mm

Preliminary data sheet

PS16

EG 1

Pin arangement see outlines