LMV921 datasheet(31/42 Pages) NSC

31 / 42 page

3-2

3.0 PROCESS INFORMATION

3.2 Process Detail & Masks (cont)

STAGE 31:

Poly Dope, Poly Anneal

STAGE 32:

Mask 4.0, Poly

STAGE 33:

Poly Etch

STAGE 34:

Poly Seal Oxide

STAGE 35:

Mask 4.3, P-LDD

STAGE 36:

P-LDD Implant

STAGE 37:

Mask 4.5, N-LDD

STAGE 38:

N-LDD Implant

STAGE 39:

Spacer Oxide Deposit & Etch

STAGE 40:

Mask 5.0, N+

STAGE 41:

N+ Implant

STAGE 42:

Mask 5.5, Base

STAGE 43:

Base Etch & Base Implant

STAGE 44:

N+ Drive

STAGE 45:

Mask 6.0, P+

STAGE 46:

P+ Implant

STAGE 47:

Dielectric Layer1 & P+ Anneal

STAGE 48:

SOG

STAGE 49:

Mask 7.0, Window

STAGE 50:

Window Etch & Contact Dielectric

STAGE 51:

Mask 7.1, Contact

STAGE 52:

Contact Etch

STAGE 53:

Contact Plug & Etchback

STAGE 54:

Metal 1 Deposition

STAGE 55:

Mask 8.0, Metal 1

STAGE 56:

Metal 1 Etch

STAGE 57:

Metal 1 Alloy

STAGE 58:

Dielectric Layer2

STAGE 59:

Mask 9.0, Via

STAGE 60:

Via Etch

STAGE 61:

Via Deposition & Metal 2 Deposit

STAGE 62:

Mask 10.0, Metal 2

STAGE 63:

Metal 2 Etch

STAGE 64:

Passivation Oxide/Nitride/Polyamide

STAGE 65:

Mask 13.0, Passivation

STAGE 66:

Passivation Etch

LMV921 Datasheet(PDF) 31 Page - National Semiconductor (TI)

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