DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.03 20120305

BAS70/A/C/S

SCHOTTKY DIODE

FEATURES

•

Low Turn-on voltage

•

Fast switching

•

Ultra-small surface mount package

•

Also available in lead free version

•

•

Pb free product at available : 99% Sn above meet RoHS

environment substance directive request

MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Symbol

Parameter

Value

Units

VR

DC Voltage

70

V

IF

Forward Continuous Current

70

mA

Pd

Power dissipation

200

mW

TJ, Tstg

Junction Operating and Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Reverse breakdown voltage

70

V

Reverse voltage leakage current

100

nA

Forward voltage

410

1000

mV

Diode capacitance

2

pF

Reveres recovery time

5

nS

SOT23

Unit:inch(mm)

BAS70 Marking: 73

BAS70S Marking: 74

BAS70C Marking: 75

BAS70A Marking: 76

Min

Max

Min

Max

A

0.900

1.150

0.035

0.045

A1

0.000

0.100

0.000

0.004

A2

0.900

1.050

0.035

0.041

b

0.300

0.500

0.012

0.020

c

0.080

0.150

0.003

0.006

D

2.800

3.000

0.110

0.118

E

1.200

1.400

0.047

0.055

E1

2.250

2.550

0.089

0.100

e

e1

1.800

2.000

0.071

0.079

L

L1

0.300

0.500

0.012

0.020

θ

0°

8°

0°

6°

0.550 REF

0.022 REF

Symbol

Dimensions In Inches

Dimensions In Millimeters

0.950 TYP

0.037 TYP

H