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2SD320 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SD320
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD320 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SD320
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 230V(Min)
·
Excellent Safe Operating Area
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC = 2A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
5
A
IB
Base Current
1
A
PC
Collector Power Dissipation@TC=25℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃


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