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2SD715 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD715 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD715 DESCRIPTION · High DC Current Gain : hFE= 2000(Min)@ IC= 1A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) · High Reliability · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for audio frequency power amplifier and low speed high current switching industrial use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 12 A PC ollector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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