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2SD711 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD711 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD711 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 500 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 0.3A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 0.3A 2.5 V ICBO Collector Cutoff Current VCB=500V; IE=0 1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 50 mA hFE DC Current Gain IC= 10A; VCE= 1.5V 100 Switching times ton Turn-on Time IC= 15A ,IB1= IB2= 0.3A 2.0 μ s tstg Storage Time 15 μ s tf Fall Time 5.0 μ s |
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