TPC8001 datasheet(3/7 Pages) TOSHIBA

3 / 7 page

TPC8001

2002-02-06

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

―

±10

µA

Drain cut−off current

IDSS

VDS = 30 V, VGS = 0 V

―

µA

Drain−source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

―

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

0.8

―

2.0

RDS (ON)

VGS = 4 V, ID = 3.5 A

―

mΩ

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 3.5 A

―

mΩ

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 3.5 A

5.5

―

Input capacitance

Ciss

―

1250

―

Reverse transfer capacitance

Crss

―

190

―

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

―

760

―

Rise time

―

Turn−on time

ton

―

Fall time

―

Switching time

Turn−off time

toff

―

100

―

Total gate charge (Gate−source

plus gate−drain)

―

Gate−source charge

Qgs

―

Gate−drain (“miller”) charge

Qgd

VDD ≈ 24 V, VGS = 10 V, ID = 7 A

―

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

IDRP

—

Forward voltage (diode)

VDSF

IDR = 7 A, VGS = 0 V

—

−1.2

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