ZXTD4591AM832TC datasheet(6/8 Pages) ZETEX

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ZXTD4591AM832

ISSUE 1 - JUNE 2002

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO

-40

IC=-100 A

Collector-Emitter Breakdown

Voltage

V(BR)CEO

-40

IC=-10mA*

Emitter-Base Breakdown Voltage

V(BR)EBO

-5

IE=-100 A

Collector Cut-Off Current

ICBO

-100

VCB=-30V

Emitter Cut-Off Current

IEBO

-100

VEB=-4V

Collector Emitter Cut-Off Current

ICES

-100

VCE=-30V

Collector-Emitter Saturation

Voltage

VCE(sat)

-200

-350

-500

IC=-0.1A, IB=-1mA*

IC=-0.5A, IB=-20mA*

IC=-1A, IB=-100mA*

Base-Emitter Saturation Voltage

VBE(sat)

-1.1

IC=-1A, IB=-50mA*

Base-Emitter Turn-On Voltage

VBE(on)

-1.0

IC=-1A, VCE=-5V*

Static Forward Current Transfer

Ratio

hFE

300

250

160

800

IC=-1mA, VCE=-5V*

IC=-0.1A, VCE=-5V*

IC=-0.5A, VCE=-5V*

IC=-1A, VCE=-5V*

IC=-2A, VCE=-5V*

Transition Frequency

150

MHz

IC=-50mA, VCE=-10V

f=100MHz

Output Capacitance

Cobo

VCB=-10V, f=1MHz

PNP TRANSISTOR

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

*Measured under pulsed conditions.

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