HMIC™ Silicon PIN Diode Switches

with Integrated Bias Network

Rev. V6

MA4SWx10B-1 Series

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Features

 Broad Bandwidth Specified 2 - 18 GHz

 Usable up to 26 GHz

 Integrated Bias Network

 Lower Insertion Loss / Higher Isolation

 Fully Monolithic, Glass Encapsulated Chip

 Up to +33 dBm CW Power Handling @ +25°C

 RoHS* Compliant

Description

The MA4SW210B-1 (SP2T) and MA4SW310B-1

(SP3T) broadband switches with an integrated bias

Microwave Integrated Circuit) process, US Patent

5,268,310. This process allows the incorporation of

silicon pedestals that form series and shunt diodes

or vias by imbedding them in low loss, low

dispersion glass. By using small spacing between

circuit elements, this combination of silicon and

glass gives HMIC devices low loss and high isolation

performance with exceptional repeatability through

low millimeter frequencies.

The top side of the chip is protected by a polymer

coating for manual or automatic handling and large

gold bond pads help facilitate connection of low

inductance ribbons. The gold metallization on the

backside of the chip allows for attachment via 80/20

(gold/tin) solder or conductive silver epoxy.

Ordering Information

Part Number

Package

MA4SW210B-1

Gel Pack

MA4SW310B-1

Gel Pack

*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

MA4SW210B-1 (SP2T)

MA4SW310B-1 (SP3T)

1. Yellow areas indicate ribbon/wire bonding pads