IPS0151 datasheet(3/12 Pages) IRF

3 / 12 page

IPS0151(S)

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Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Tsd

Over temperature threshold

—

165

—

See fig. 1

Isd

Over current threshold

See fig. 1

Vreset

IN protection reset threshold

1.5

2.3

Treset

Time to reset protection

µs

Vin = 0V, Tj = 25

EOI_OT

Short circuit energy (see application note)

—

400

—

µJ

Vcc = 14V

Protection Characteristics

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Rds(on)

ON state resistance Tj = 25

oC10

Tj = 150

oC—

Idss1

Drain to source leakage current

0.5

Vcc = 14V, Tj = 25

@Tj=25oC

Idss2

Drain to source leakage current

Vcc = 40V, Tj = 25

@Tj=25oC

V clamp 1 Drain to source clamp voltage 1

Id = 20mA (see Fig.3 & 4)

V clamp 2 Drain to source clamp voltage 2

Vin clamp IN to source clamp voltage

8.1

9.5

Iin = 1 mA

Vin th

IN threshold voltage

1.6

Id = 50mA, Vds = 14V

Iin, -on

ON state IN positive current

200

Vin = 5V

Iin, -off

OFF state IN positive current

130

250

Vin = 5V

over-current triggered

Static Electrical Characteristics

(Tj = 25

oC unless otherwise specified.)

Ω

Vin = 5V, Ids = 1A

Id=Ishutdown (see Fig.3 & 4)

µA

Switching Electrical Characteristics

Vcc = 14V, Resistive Load = 3Ω, Rinput = 50Ω, 100us pulse, Tj = 25

oC, (unless otherwise specified).

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Ton

Turn-on delay time

0.05

0.25

0.6

Rise time

0.2

0.9

1.5

Trf

Time to (final Rds(on) 1.3%)

—

3.8

—

Toff

Turn-off delay time

0.8

1.5

Fall time

0.4

1.1

Qin

Total gate charge

—

Vin = 5V

See figure 2

µs

µA

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