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IRGS30B60 Datasheet(PDF) 2 Page - International Rectifier |
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IRGS30B60 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 13 page  IRGB/S/SL30B60K 2 www.irf.com Note to
are on page 13 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ——V VGE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0.40 — V/°C VGE = 0V, IC = 1mA (25°C-150°C) —1.95 2.35 IC = 30A, VGE = 15V, TJ = 25°C 5,6,7 VCE(on) Collector-to-Emitter Voltage — 2.40 2.75 V IC = 30A, VGE = 15V, TJ = 150°C 8,9,10 — 2.6 2.95 IC = 30A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA 8,9,10 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -10 — mV/°C VCE = VGE, IC = 1.0mA (25°C-150°C) 11 gfe Forward Transconductance — 18 — S VCE = 50V, IC = 50A, PW = 80µs —5.0 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current — 1000 2000 µA VGE = 0V, VCE = 600V, TJ = 150°C —1830 3000 VGE = 0V, VCE = 600V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. Qg Total Gate Charge (turn-on) — 102 153 IC = 30A 17 Qge Gate-to-Emitter Charge (turn-on) — 14 21 nC VCC = 400V CT1 Qgc Gate-to-Collector Charge (turn-on) — 44 66 VGE = 15V Eon Turn-On Switching Loss — 350 620 IC = 30A, VCC = 400V CT4 Eoff Turn-Off Switching Loss — 825 955 µJ VGE = 15V, RG = 10Ω, L = 200µH Etot Total Switching Loss — 1175 1575 TJ = 25°C f td(on) Turn-On delay time — 46 60 IC = 30A, VCC = 400V tr Rise time — 28 39 ns VGE = 15V, RG = 10Ω, L = 200µH CT4 td(off) Turn-Off delay time — 185 200 TJ = 25°C tf Fall time — 31 40 Eon Turn-On Switching Loss — 635 1085 IC = 30A, VCC = 400V CT4 Eoff Turn-Off Switching Loss — 1150 1350 µJ VGE = 15V, RG = 10Ω, L = 200µH 12,14 Etot Total Switching Loss — 1785 2435 TJ = 150°C f WF1,WF2 td(on) Turn-On delay time — 46 60 IC = 30A, VCC = 400V 13,15 tr Rise time — 28 39 ns VGE = 15V, RG = 10Ω, L = 200µH CT4 td(off) Turn-Off delay time — 205 235 TJ = 150°C WF1 tf Fall time — 32 42 WF2 LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 1750 2500 VGE = 0V Coes Output Capacitance — 160 255 pF VCC = 30V 16 Cres Reverse Transfer Capacitance — 60 90 f = 1.0MHz RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 150°C, IC = 120A, Vp = 600V 4 VCC=500V,VGE = +15V to 0V,RG =10Ω CT2 SCSOA Short Circuit Safe Operating Area 10 — — µs TJ = 150°C, Vp = 600V, RG = 10Ω CT3 VCC=360V,VGE = +15V to 0V WF3 ISC (Peak) Peak Short Circuit Collector Current — 200 — A WF3 |
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