2SA2153

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2

ELECTRICAL CHARACTERISTICS

at Ta

Parameter

Symbol

Conditions

Value

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=−40V, IE=0A

−1

μA

Emitter Cutoff Current

IEBO

VEB=−4V, IC=0A

−1

μA

DC Current Gain

hFE1

VCE=−2V, IC=−100mA

200

560

hFE2

VCE=−2V,IC=−1.5A

40

Gain-Bandwidth Product

fT

VCE=−10V, IC=−300mA

420

MHz

Output Capacitance

Cob

VCB=−10V, f=1MHz

16

pF

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=−1A, IB=−50mA

−0.2

−0.4

V

Base to Emitter Saturation Voltage

VBE(sat)

IC=−1A, IB=−50mA

−0.9

−1.2

V

Collector to Base Breakdown

Voltage

V(BR)CBO

IC=−10μA, IE=0A

−50

V

Collector to Emitter Breakdown

Voltage

V(BR)CEO

IC=−1mA, RBE=∞

−50

V

Emitter to Base Breakdown Voltage

V(BR)EBO

IE=−10μA, IC=0A

−6

V

Turn-On Time

ton

See specified Test

Circuit

35

ns

Storage Time

tstg

200

ns

Fall Time

tf

24

ns

Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Switching Time Test Circuit