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IRHNJ57230 Datasheet(PDF) 1 Page - International Rectifier |
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IRHNJ57230 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 13 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 8.2 IDM Pulsed Drain Current ➀ 52 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 60 mJ IAR Avalanche Current ➀ 13 A EAR Repetitive Avalanche Energy ➀ 7.5 mJ dv/dt Peak Diode Recovery dv/dt ➂ 4.4 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 ( for 5s ) Weight 1.0 ( Typical ) g Pre-Irradiation International Rectifier’s R5TM technology provides high performance power MOSFETs for space appli- cations. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. oC A RADIATION HARDENED IRHNJ57230 POWER MOSFET SURFACE MOUNT (SMD-0.5) 07/22/02 www.irf.com 1 200V, N-CHANNEL c TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57230 100K Rads (Si) 0.20 Ω 13A IRHNJ53230 300K Rads (Si) 0.20 Ω 13A IRHNJ54230 600K Rads (Si) 0.20 Ω 13A IRHNJ58230 1000K Rads (Si) 0.25 Ω 13A Features: n Single Event Effect (SEE) Hardened n Ultra low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Ceramic Package n Light Weight For footnotes refer to the last page 4 4# SMD-0.5 PD - 93753A |
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