 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
TIPL760C Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
|
|
|||||||||||||||||||||||||||||
TIPL760C Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
|
|
2 / 5 page  TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS 2 PRODU CT INFORMA TION MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCEO(sus) Collector-emitter sustaining voltage IC = 10 mA L = 25 mH (see Note 2) TIPL760B TIPL760C 500 550 V ICES Collector-emitter cut-off current VCE = 1100 V VCE = 1200 V VCE = 1100 V VCE = 1200 V VBE =0 VBE =0 VBE =0 VBE =0 TC = 100°C TC = 100°C TIPL760B TIPL760C TIPL760B TIPL760C 50 50 200 200 µA ICEO Collector cut-off current VCE = 500 V VCE = 550 V IB =0 IB =0 TIPL760B TIPL760C 50 50 µA IEBO Emitter cut-off current VEB = 10 V IC =0 1 mA hFE Forward current transfer ratio VCE = 5 V IC = 0.5 A (see Notes 3 and 4) 20 60 VCE(sat) Collector-emitter saturation voltage IB = 0.4 A IB = 0.6 A IB = 0.6 A IC = 2A IC = 3A IC = 3A (see Notes 3 and 4) TC = 100°C 1.0 2.5 5.0 V VBE(sat) Base-emitter saturation voltage IB = 0.4 A IB = 0.6 A IB = 0.6 A IC = 2A IC = 3A IC = 3 A (see Notes 3 and 4) TC = 100°C 1.2 1.4 1.3 V ft Current gain bandwidth product VCE = 10 V IC = 0.5 A f = 1 MHz 12 MHz Cob Output capacitance VCB = 20 V IE = 0 f = 0.1 MHz 110 pF thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.56 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT tsv Voltage storage time IC = 3 A VBE(off) = -5 V IB(on) = 0.6 A (see Figures 1 and 2) 2.5 µs trv Voltage rise time 300 ns tfi Current fall time 250 ns tti Current tail time 150 ns txo Cross over time 400 ns tsv Voltage storage time IC = 3 A VBE(off) = -5 V IB(on) = 0.6 A TC = 100°C (see Figures 1 and 2) 3µs trv Voltage rise time 500 ns tfi Current fall time 250 ns tti Current tail time 150 ns txo Cross over time 750 ns |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
