CAS325M12HM2 datasheet(2/7 Pages) CREE

2 / 7 page

CAS325M12HM2, Rev. A, 12-2016

Electrical Characteristics (T

C = 25˚C unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Unit

Test Conditions

Note

VDSS

Drain-SourceBlockingVoltage

1.2

GS=-5V,ID=2mA

VGS(th)

GateThresholdVoltage

2.0

2.6

DS=VGS,ID=105mA

2.0

DS=VGS,ID=105mA,TJ=175˚C

IDSS

ZeroGateVoltageDrainCurrent

720

2000

μA

VDS=1.2kV,VGS=-5V

IGSS

Gate-SourceLeakageCurrent

3.5

GS=20V,VDS=0V

RDS(on)

OnStateResistance

3.6

4.3

mΩ

VGS=20V,IDS=400A

Fig.5

7.6

VGS=18V,IDS=400A,TJ=175˚C

Ciss

InputCapacitance

19.5

VGS=0V,VDS=1000V,f=1MHz,

VAC=25mV

Fig.11,

Coss

OutputCapacitance

1.54

Crss

ReverseTransferCapacitance

0.10

Eon

Turn-OnSwitchingEnergy

5.6

VDD=600V,VGS=-5V/+20V

ID=300A,RG(ext)=2Ω

Note:IEC60747-8-4Definitions

Fig.13

EOff

Turn-OffSwitchingEnergy

3.7

QGS

Gate-SourceCharge

322

VDS=800V,VGS=-5V/+20V,

ID=350A,PerIEC60747-8-4

QGD

Gate-DrainCharge

350

TotalGateCharge

1127

dff

Free-Wheeling SiC Schottky Diode Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Unit

Test Conditions

Note

VSD

DiodeForwardVoltage

1.7

2.0

IF=350A,V

GS=-5V

Fig.6

2.5

2.8

IF=350A,TJ=175˚C,V

GS=-5V

TotalCapacitiveCharge

4.3

μC

IncludesSchottky&Bodydiodes

Note:Thereverserecoveryispurelycapacitive

Thermal Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Unit

Test Conditions

Note

thJCM

ThermalResistanceJuction-to-CaseforMOSFET

0.085

0.100

0.115

˚C/W

Fig.

18,19

thJCD

ThermalResistanceJuction-to-CaseforDiode

0.094

0.110

0.127

Additional Module Data

Symbol

Parameter

Min.

Typ.

Max.

Unit

Test Condtion

Weight

140

MountingTorque

0.9

1.1

1.3

PowerTerminals,M4Bolts

4.5

Baseplate,M6Bolts

LoopInductance

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