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2SC4617G Datasheet(PDF) 2 Page - ON Semiconductor

Part # 2SC4617G
Description  NPN Silicon General Purpose Amplifier Transistor
PDF  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SC4617G Datasheet(HTML) 2 Page - ON Semiconductor

  2SC4617G Datasheet HTML 1Page - ON Semiconductor 2SC4617G Datasheet HTML 2Page - ON Semiconductor 2SC4617G Datasheet HTML 3Page - ON Semiconductor 2SC4617G Datasheet HTML 4Page - ON Semiconductor  
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2SC4617G, S2SC4617G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
−
−
Vdc
Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0)
V(BR)EBO
5.0
−
−
Vdc
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)
ICBO
−
−
0.5
mA
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)
IEBO
−
−
0.5
mA
Collector-Emitter Saturation Voltage (Note 2)
(IC = 60 mAdc, IB = 5.0 mAdc)
VCE(sat)
−
−
0.4
Vdc
DC Current Gain (Note 2)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
hFE
120
−
560
−
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
fT
−
180
−
MHz
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)
COB
−
2.0
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤ 300 ms, D.C. ≤ 2%.



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