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C1004 Datasheet(PDF) 1 Page - IMP, Inc |
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C1004 Datasheet(HTML) 1 Page - IMP, Inc |
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1 / 2 page ![]() © IMP, Inc. ISO 9001 Registered ® 17 Process C1004 CMOS 1.0 µm 5 Volt Digital N-Channel Transistor Symbol Minimum Typical Maximum Unit Comments Threshold Voltage VTN 0.55 0.75 0.95 V 100x1.0 µm Body Factor γ N 0.60 V1/2 100x1.0 µm Conduction Factor βN 74 87 100 µA/V2 100x100 µm Effective Channel Length LeffN 0.60 0.75 0.90 µm 100x1.0 µm Width Encroachment ∆WN 0.8 µm Per side Punch Through Voltage BVDSSN 7V Poly Field Threshold VTFP(N) 10 V P-Channel Transistor Symbol Minimum Typical Maximum Unit Comments Threshold Voltage VTP –0.85 –1.0 –1.15 V 100x1.0 µm Body Factor γ P 0.4 V1/2 100x1.0 µm Conduction Factor βP 24 28 32 µA/V2 100x100 µm Effective Channel Length LeffP 0.83 0.98 1.13 µm 100x1.0 µm Width Encroachment ∆WP 0.85 µm Per side Punch Through Voltage BVDSSP –7 V Poly Field Threshold Voltage VTFP(P) –10 V Diffusion & Thin Films Symbol Minimum Typical Maximum Unit Comments Well (field) Sheet Resistance ρ N-well(f) 0.8 1.0 1.22 K Ω/ n-well N+ Sheet Resistance ρ N+ 20 35 50 Ω/ N+ Junction Depth xjN+ 0.45 µm P+ Sheet Resistance ρ P+ 60 80 100 Ω/ P+ Junction Depth xjP+ 0.5 µm Gate Oxide Thickness TGOX 20 nm Field Oxide Thickness TFIELD 700 nm Poly Sheet Resistance ρ POLY 15 22 30 Ω/ Metal-1 Sheet Resistance ρ M1 50 m Ω/ Metal-2 Sheet Resistance ρ M2 30 m Ω/ Passivation Thickness TPASS 200+900 nm oxide+nit. Capacitance Symbol Minimum Typical Maximum Unit Comments Gate Oxide Cox 1.52 1.64 1.82 fF/ µm2 Metal-1 to Poly1 CM1P 0.046 fF/ µm2 Metal-1 to SIlicon CMIS 0.028 fF/ µm2 Metal-2 to Metal-1 CMM 0.038 fF/ µm2 Electrical Characteristics T=25oC Unless otherwise noted |
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