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C1004 Datasheet(PDF) 1 Page - IMP, Inc

Part # C1004
Description  Process C1004
PDF  2 Pages
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Manufacturer  IMP [IMP, Inc]
Direct Link  http://www.ds-imp.com.cn/index.asp
Logo IMP - IMP, Inc

C1004 Datasheet(HTML) 1 Page - IMP, Inc

  C1004 Datasheet HTML 1Page - IMP, Inc C1004 Datasheet HTML 2Page - IMP, Inc  
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© IMP, Inc.
ISO 9001 Registered
®
17
Process C1004
CMOS 1.0
µm
5 Volt Digital
N-Channel Transistor
Symbol
Minimum
Typical
Maximum
Unit
Comments
Threshold Voltage
VTN
0.55
0.75
0.95
V
100x1.0
µm
Body Factor
γ
N
0.60
V1/2
100x1.0
µm
Conduction Factor
βN
74
87
100
µA/V2
100x100
µm
Effective Channel Length
LeffN
0.60
0.75
0.90
µm
100x1.0
µm
Width Encroachment
∆WN
0.8
µm
Per side
Punch Through Voltage
BVDSSN
7V
Poly Field Threshold
VTFP(N)
10
V
P-Channel Transistor
Symbol
Minimum
Typical
Maximum
Unit
Comments
Threshold Voltage
VTP
–0.85
–1.0
–1.15
V
100x1.0
µm
Body Factor
γ
P
0.4
V1/2
100x1.0
µm
Conduction Factor
βP
24
28
32
µA/V2
100x100
µm
Effective Channel Length
LeffP
0.83
0.98
1.13
µm
100x1.0
µm
Width Encroachment
∆WP
0.85
µm
Per side
Punch Through Voltage
BVDSSP
–7
V
Poly Field Threshold Voltage
VTFP(P)
–10
V
Diffusion & Thin Films
Symbol
Minimum
Typical
Maximum
Unit
Comments
Well (field) Sheet Resistance
ρ
N-well(f)
0.8
1.0
1.22
K
Ω/
n-well
N+ Sheet Resistance
ρ
N+
20
35
50
Ω/
N+ Junction Depth
xjN+
0.45
µm
P+ Sheet Resistance
ρ
P+
60
80
100
Ω/
P+ Junction Depth
xjP+
0.5
µm
Gate Oxide Thickness
TGOX
20
nm
Field Oxide Thickness
TFIELD
700
nm
Poly Sheet Resistance
ρ
POLY
15
22
30
Ω/
Metal-1 Sheet Resistance
ρ
M1
50
m
Ω/
Metal-2 Sheet Resistance
ρ
M2
30
m
Ω/
Passivation Thickness
TPASS
200+900
nm
oxide+nit.
Capacitance
Symbol
Minimum
Typical
Maximum
Unit
Comments
Gate Oxide
Cox
1.52
1.64
1.82
fF/
µm2
Metal-1 to Poly1
CM1P
0.046
fF/
µm2
Metal-1 to SIlicon
CMIS
0.028
fF/
µm2
Metal-2 to Metal-1
CMM
0.038
fF/
µm2
Electrical Characteristics
T=25oC Unless otherwise noted


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