PZT3904T1G. datasheet(2/7 Pages) ONSEMI

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PZT3904T1G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS (Note 2)

Collector − Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0)

V(BR)CEO

−

Vdc

Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0)

V(BR)CBO

−

Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

V(BR)EBO

6.0

−

Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)

IBL

−

nAdc

Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)

ICEX

−

ON CHARACTERISTICS (Note 3)

DC Current Gain (Note 2)

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

HFE

100

−

300

−

Collector − Emitter Saturation Voltage (Note 3)

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

−

0.2

0.3

Vdc

Base − Emitter Saturation Voltage (Note 3)

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat)

0.65

−

0.85

0.95

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current − Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

300

−

MHz

Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

5.0

Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

8.0

Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

hie

1.0

Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

hre

0.5

8.0

X 10−4

Small − Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

hfe

100

400

−

Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

hoe

1.0

mMhos

Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz)

−

5.0

SWITCHING CHARACTERISTICS

Delay Time

(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,

IC = 10 mAdc, IB1 = 1.0 mAdc)

−

Rise Time

−

Storage Time

(VCC = 3.0 Vdc,

IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

−

200

Fall Time

−

2. FR− 5 = 1.0

0.75 0.062 in.

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

+3 V

275

10 k

1N916

CS < 4 pF*

+3 V

275

10 k

CS < 4 pF*

< 1 ns

-0.5 V

+10.9 V

300 ns

DUTY CYCLE = 2%

< 1 ns

-9.1 V

′

+10.9 V

DUTY CYCLE = 2%

10 < t1 < 500 ms

* Total shunt capacitance of test jig and connectors

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