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PIC16C84A Datasheet(PDF) 71 Page - Microchip Technology |
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PIC16C84A Datasheet(HTML) 71 Page - Microchip Technology |
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71 / 117 page  © 1995 Microchip Technology Inc. DS30081F-page 71 PIC16C8X Applicable Devices 83 R83 84 84A R84 11.0 ELECTRICAL CHARACTERISTICS FOR PIC16C84 Absolute Maximum Ratings † Ambient temperature under bias.............................................................................................................-55 °C to +125°C Storage temperature .............................................................................................................................. -65 °C to +150°C Voltage on VDD with respect to VSS ............................................................................................................... 0 to +7.5V Voltage on MCLR with respect to VSS (Note 2).................................................................................................0 to +14V Voltage on all other pins with respect to VSS .................................................................................. -0.6V to (VDD + 0.6V) Total power dissipation (Note 1)...........................................................................................................................800 mW Maximum current out of VSS pin ...........................................................................................................................150 mA Maximum current into VDD pin ..............................................................................................................................100 mA Input clamp current, IIK (VI < 0 or VI > VDD) .....................................................................................................................± 20 mA Output clamp current, IOK (V0 < 0 or V0 >VDD) ...............................................................................................................± 20 mA Maximum output current sunk by any I/O pin..........................................................................................................25 mA Maximum output current sourced by any I/O pin ....................................................................................................20 mA Maximum current sunk by PORTA ..........................................................................................................................80 mA Maximum current sourced by PORTA .....................................................................................................................50 mA Maximum current sunk by PORTB........................................................................................................................150 mA Maximum current sourced by PORTB...................................................................................................................100 mA Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL) Note 2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus, a series resistor of 50-100 Ω should be used when applying a “low” level to the MCLR pin rather than pulling this pin directly to VSS. TABLE 11-1: CROSS REFERENCE OF DEVICE SPECS FOR OSCILLATOR CONFIGURATIONS AND FREQUENCIES OF OPERATION (COMMERCIAL DEVICES) † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. OSC PIC16C84-04 PIC16C84-10 PIC16LC84-04 RC VDD: 4.0V to 6.0V IDD: 4.5 mA max. at 5.5V IPD: 100 µA max. at 4.0V WDT dis Freq: 4.0 MHz max. VDD: 4.5V to 5.5V IDD: 1.8 mA typ. at 5.5V IPD: 40.0 µA typ. at 4.5V WDT dis Freq: 4.0 MHz max. VDD: 2.0V to 6.0V IDD: 4.5 mA typ. at 5.5V IPD: 100 µA typ. at 4V WDT dis Freq: 2.0 MHz max. XT VDD: 4.0V to 6.0V IDD: 4.5 mA max. at 5.5V IPD: 100 µA max. at 4.0V WDT dis Freq: 4.0 MHz max. VDD: 4.5V to 5.5V IDD: 1.8 mA typ. at 5.5V IPD: 40.0 µA typ. at 4.5V WDT dis Freq: 4.0 MHz max. VDD: 2.0V to 6.0V IDD: 4.5 mA typ. at 5.5V IPD: 100 µA typ. at 4V WDT dis Freq: 2.0 MHz max. HS VDD: 4.5V to 5.5V IDD: 4.5 mA typ. at 5.5V IPD: 40.0 µA typ. at 4.5V WDT dis Freq: 4.0 MHz max. VDD: 4.5V to 5.5V IDD: 10 mA max. at 5.5V typ. Freq: 10 MHz max. Do not use in HS mode LP VDD: 4.0V to 6.0V IDD: 60 µA typ. at 32 kHz, 2.0V IPD: 26 µA typ. at 2.0V WDT dis Freq: 200 kHz max. Do not use in LP mode VDD: 2.0V to 6.0V IDD: 400 µA max. at 32 kHz, 2.0V IPD: 100 µA max. at 4.0V WDT dis Freq: 200 kHz max. The shaded sections indicate oscillator selections which are tested for functionality, but not for MIN/MAX specifications. It is recommended that the user select the device type that ensures the specifications required. IPD: 40.0 µA typ. at 4.5V WDT dis Thi d t t d ith F M k 4 0 4 |
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