External

Sensor Die

LayoutandConfiguration

P330Specifications

Unit

Value

Comment

Pressure Range

mmHg

450 to 1050

Absolute

pressure

mmHg

2700

mmHg

4500

Excitation

Volts

1 to 6

DC Voltage

kohm

3.2±1.0

%

±5

mV/V

4.5

Typical @ 750

mmHg

µV/V/mmHg

10

Typical

%

±1

Typical TBNL,

300 mmHg

Range

µV/V/°C

±40

Maximum

%/°C

-0.2

Typical

%/°C

0.05

Typical

°C

15 to 45

59 to 113°F

Storage Temperature

°C

-25 to 70

-13 to 158°F

Clean, dry and non-corrosive gases

Shipping and Handling

Wafers are shipped on sticky tape with rings in protective

plastic containers or in gel paks. All wafers are 100%

electrically probed and visually inspected. Rejects are marked

by ink dots.

1. Values measured at 22°C (72°F) unless noted with 3000 ohm

resistors completing the bridge.

2. Pressure sensor performance can be affected by die mounting.

Packagingstressshouldbeminimizedtoachievethespecified

performance.

3. Proof Pressure: The maximum pressure at which the sensor may

be subjected as an uncommon event and for a short duration of

time without permanent damage or performance degradation. If

the Proof Pressure is exceeded, the die performance is no longer

guaranteed.

4. Burst Pressure: The pressure at which permanent damage to the

sensormayoccur.Specificationisforquasi-staticpressureinan

oil medium applied to the diaphragm side of the die.

5. Parameter is measured at the wafer-level 100% at room

temperature, atmospheric pressure and 3V.

6. Symmetry is calculated as 2*(r1 – r2)/(r1 + r2), where r1 and r2 are

two piezoresistors measured separately.

7. Parametersmarked“Typical”areverifiedbytestingsamplesfrom

each wafer. TCR of sensor resistors only. TCR of bridge circuit

will be affected by the resistor values completing the bridge.

8. Die is capable beyond this range with additional validation.

9. Die with protective layers has been successfully used in various

medical and biological applications.

10. If the sensor is to be exposed to radiation, it is recommended to

shield the die from radiation and implement auto-zeroing.

Notes

AAS-920-516B - 08/2014

www.amphenol-sensors.com

©2014AmphenolCorporation.AllRightsReserved.Specificationsaresubjecttochangewithoutnotice.

Other company names and product names used in this document are the registered trademarks or

trademarks of their respective owners.

Amphenol

Advanced Sensors

P330 Schematic Diagram: Complete the full bridge by

inserting two 3000 ohm external resistors. Match resistors

closely to minimize offset error. For +IN, both sides of the split

pad must be connected for proper operation.