CSD18510KCS datasheet(3/13 Pages) TI1

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CSD18510KCS

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SLPS663 – MARCH 2017

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5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, ID = 250 μA

IDSS

Drain-to-source leakage current

VGS = 0 V, VDS = 32 V

μA

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, ID = 250 μA

1.4

1.7

2.3

RDS(on)

Drain-to-source on resistance

VGS = 4.5 V, ID = 100 A

2.0

2.6

Ω

VGS = 10 V, ID = 100 A

1.4

1.7

gfs

Transconductance

VDS = 4 V, ID = 100 A

330

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

VGS = 0 V, VDS = 20 V, ƒ = 1 MHz

8770

11400

Coss

Output capacitance

832

1080

Crss

Reverse transfer capacitance

424

551

Series gate resistance

0.9

1.8

Ω

Gate charge total (4.5 V)

VDS = 20 V, ID = 100 A

Gate charge total (10 V)

118

153

Qgd

Gate charge gate-to-drain

Qgs

Gate charge gate-to-source

Qg(th)

Gate charge at Vth

Qoss

Output charge

VDS = 20 V, VGS = 0 V

td(on)

Turnon delay time

VDS = 20 V, VGS = 10 V,

IDS = 100 A, RG = 0 Ω

Rise time

td(off)

Turnoff delay time

Fall time

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = 100 A, VGS = 0 V

0.85

1.0

Qrr

Reverse recovery charge

VDS= 20 V, IF = 100 A,

di/dt = 300 A/μs

trr

Reverse recovery time

5.2 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-case thermal resistance

0.6

°C/W

RθJA

Junction-to-ambient thermal resistance

°C/W

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