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TLLE4401 Datasheet(PDF) 1 Page - Vishay Siliconix |
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TLLE4401 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 6 page ![]() TLLE4401, TLLK4401 www.vishay.com Vishay Semiconductors Rev. 1.5, 14-Oct-14 1 Document Number: 83343 For technical questions, contact: LED@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Intensity LED in Ø 3 mm Tinted Diffused Package DESCRIPTION These devices have been designed to meet the increasing demand for AlInGaP technology general indicating and lighting purposes. They are housed in a 3 mm diffused plastic package. The wide viewing angle of these devices provides a high brightness. All packing units are categorized in luminous intensity groups. That allows users to assemble LEDs with uniform appearance. PRODUCT GROUP AND PACKAGE DATA • Product group: LED •Package: 3 mm • Product series: low current • Angle of half intensity: ± 30° FEATURES • AlInGaP technology • Standard Ø 3 mm (T-1) package • Small mechanical tolerances • Wide viewing angle • Very high intensity • Low power consumption • Specified at IF = 2 mA • Luminous intensity categorized • ESD-withstand voltage: up to 2 kV HBM according to JESD22-A114-B • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Status lights •Off / on indicator • Background illumination • Readout lights • Maintenance lights •Legend light • Low power DC circuits Note (1) Driving the LED in reverse direction is suitable for a short term application 19222 PARTS TABLE PART COLOR LUMINOUS INTENSITY (mcd) at IF (mA) WAVELENGTH (nm) at IF (mA) FORWARD VOLTAGE (V) at IF (mA) TECHNOLOGY MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. TLLK4401 Super red 6.3 17 32 2 626 630 639 2 1.6 1.8 2.2 2 AllnGaP on GaAs TLLE4401 Yellow 6.3 17 32 2 581 589 594 2 1.6 1.8 2.2 2 AllnGaP on GaAs ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) TLLK4401, TLLE4401 PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage (1) VR 5V DC forward current Tamb ≤ 60 °C IF 30 mA Surge forward current tp ≤ 10 μs IFSM 0.1 A Power dissipation Tamb ≤ 60 °C PV 80 mW Junction temperature Tj 100 °C Operating temperature range Tamb -40 to +100 °C Storage temperature range Tstg -55 to +100 °C Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C Thermal resistance junction/ambient RthJA 400 K/W |
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