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LMH6622MM Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LMH6622MM Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 18 page  Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance Human Body Model 2kV (Note 2) Machine Model 200V (Note 2) V IN Differential ±1.2V Supply Voltage (V + –V−) 13.2V Voltage at Input Pins V + +0.5V, V− −0.5V Soldering Information Infrared or Convection (20 sec) 235˚C Wave Soldering (10 sec) 260˚C Storage Temperature Range −65˚C to +150˚C Junction Temperature (Note 4) +150˚C Operating Ratings (Note 1) Supply Voltage (V +–V−) ±2.25V to ±6V Junction Temperature Range (Note 3), (Note 4) −40˚C to +85˚C Package Thermal Resistance (Note 4) ( θ JA) 8-pin SOIC 166˚C/W 8-pin MSOP 211˚C/W ±6V Electrical Characteristics Unless otherwise specified, T J = 25˚C, V + = 6V, V− = −6V, V CM = 0V, AV = +2, RF = 500Ω,RL = 100Ω. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (Note 6) Typ (Note 5) Max (Note 6) Units Dynamic Performance f CL −3dB BW V O = 200mVPP 160 MHz BW 0.1dB 0.1dB Gain Flatness V O = 200mVPP 30 MHz SR Slew Rate (Note 8) V O =2VPP 85 V/µs TS Settling Time V O =2VPP to ±0.1% 40 ns V O =2VPP to ±1.0% 35 Tr Rise Time V O = 0.2V Step, 10% to 90% 2.3 ns Tf Fall Time V O = 0.2V Step, 10% to 90% 2.3 ns Distortion and Noise Response e n Input Referred Voltage Noise f = 100kHz 1.6 nV/ i n Input Referred Current Noise f = 100kHz 1.5 pA/ DG Differential Gain R L = 150Ω,RF = 470Ω, NTSC 0.03 % DP Differential Phase R L = 150Ω,RF = 470Ω, NTSC 0.03 deg HD2 2 nd Harmonic Distortion f c = 1MHz, VO =2VPP,RL = 100Ω −90 dBc f c = 1MHz, VO =2VPP,RL = 500Ω −100 HD3 3 rd Harmonic Distortion f c = 1MHz, VO =2VPP,RL = 100Ω −94 dBc f c = 1MHz, VO =2VPP,RL = 500Ω −100 MTPR Upstream V O = 0.6 VRMS, 26kHz to 132kHz (see test circuit 5) −78 dBc Downstream V O = 0.6 VRMS, 144kHz to 1.1MHz (see test circuit 5) −70 Input Characteristics V OS Input Offset Voltage V CM = 0V −1.2 −2 +0.2 +1.2 +2 mV TC V OS Input Offset Average Drift V CM = 0V (Note 7) −2.5 µV/˚C I OS Input Offset Current V CM =0V −1 −1.5 −0.04 1 1.5 µA I B Input Bias Current V CM = 0V 4.7 10 15 µA R IN Input Resistance Common Mode 17 M Ω Differential Mode 12 k Ω C IN Input Capacitance Common Mode 0.9 pF Differential Mode 1.0 pF www.national.com 2 |
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