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LMH6654MFX Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LMH6654MFX Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 17 page  Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance (Note 2) Human Body Model 2kV Machine Model 200V V IN Differential ±1.2V Output Short Circuit Duration (Note 3) Supply Voltage (V + −V−) 13.2V Voltage at Input pins V + +0.5V, V− −0.5V Storage Temperature Range −65˚C to +150˚C Junction Temperature (Note 4) +150˚C Soldering Information Infrared or Convection (20 sec.) 235˚C Wave Soldering (10 sec.) 260˚C Operating Ratings (Note 1) Supply Voltage (V + -V−) ±2.5V to ±6.0V Junction Temperature Range −40˚C to +85˚C Thermal Resistance ( θ JA) 8-Pin SOIC 172˚C/W 8-Pin MSOP 235˚C/W 5-Pin SOT-23 265˚C/W ±5V Electrical Characteristics Unless otherwise specified, all limits guaranteed for T J = 25˚C, V + = +5V, V− = −5V, V CM = 0V, AV = +1, RF =25Ω for gain = +1, R F = 402Ω for gain = ≥ +2, and RL = 100Ω. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (Note 6) Typ (Note 5) Max (Note 6) Units Dynamic Performance f CL Close Loop Bandwidth A V = +1 250 MHz A V = +2 130 A V =+5 52 A V = +10 26 GBWP Gain Bandwidth Product A V ≥ +5 260 MHz Bandwidth for 0.1dB Flatness A V +1 18 MHz φm Phase Margin 50 deg SR Slew Rate (Note 8) A V = +1, VIN =2VPP 200 V/µs T S Settling Time 0.01% A V = +1, 2V Step 25 ns 0.1% 15 ns t r Rise Time A V = +1, 0.2V Step 1.4 ns t f Fall Time A V = +1, 0.2V Step 1.2 ns Distortion and Noise Response e n Input Referred Voltage Noise f ≥ 0.1 MHz 4.5 nV/ i n Input-Referred Current Noise f ≥ 0.1 MHz 1.7 pA/ Second Harmonic Distortion A V = +1, f = 5MHz −80 dBc Third Harmonic Distortion V O =2VPP,RL = 100Ω −85 X t Crosstalk (for LMH6655 only) Input Referred, 5MHz, Channel-to-Channel −80 dB DG Differential Gain A V = +2, NTSC, RL = 150Ω 0.01 % DP Differential Phase A V = +2, NTSC, RL = 150Ω 0.025 deg Input Characteristics V OS Input Offset Voltage V CM =0V −3 −4 ±13 4 mV TC V OS Input Offset Average Drift V CM = 0V (Note 7) 6 µV/˚C I B Input Bias Current V CM =0V 5 12 18 µA I OS Input Offset Current V CM =0V −1 −2 0.3 1 2 µA R IN Input Resistance Common- Mode 4 M Ω Differential Mode 20 k Ω www.national.com 2 |
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