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LMH6714MFX Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LMH6714MFX Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 15 page  Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance (Note 4) Human Body Model 2000V Machine Model 200V V CC ±6.75V I OUT (Note 3) Common Mode Input Voltage ±V CC Differential Input Voltage 2.2V Maximum Junction Temperature +150˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature (soldering 10 sec) +300˚C Storage Temperature Range −65˚C to +150˚C Shutdown Pin Voltage (Note 5) +V CC to VCC/2-1V Operating Ratings (Note 3) Thermal Resistance Package ( θ JA) 5-Pin SOT23 232˚C/W 6-Pin SOT23 198˚C/W 8-Pin SOIC 145˚C/W 14-Pin SOIC 130˚C/W Operating Temperature −40˚C +85˚C Nominal Supply Voltage ±5V ±6V Electrical Characteristics Unless specified, A V = +2, RF = 300 Ω:V CC = ±5V, RL = 100 Ω, LMH6714/6720/6722. Boldface limits apply at temperature extremes. Symbol Parameter Conditions Min Typ Max Units Frequency Domain Response SSBW −3dB Bandwidth V OUT = 0.5VPP 345 400 MHz LSBW −3dB Bandwidth V OUT = 2.0VPP 200 250 MHz Gain Flatness V OUT =2VPP GFP Peaking DC to 120MHz 0.1 dB GFR Rolloff DC to 120MHz 0.1 dB LPD Linear Phase Deviation DC to 120MHz 0.5 deg DG Differential Gain R L = 150 Ω, 4.43MHz (LMH6714) 0.01 % DG Differential Gain R L = 150 Ω, 4.43MHz (LMH6720) 0.02 % DP Differential Phase R L = 150 Ω, 4.43MHz 0.01 deg Time Domain Response TRS Rise and Fall Time .5V Step 1.5 ns TRL 2V Step 2.6 ns t s Settling Time to 0.05% 2V Step 12 ns SR Slew Rate 6V Step 1200 1800 V/µs Distortion and Noise Response HD2 2nd Harmonic Distortion 2V PP, 20MHz −58 dBc HD3 3rd Harmonic Distortion 2V PP, 20MHz −70 dBc IMD 3rd Order Intermodulation Products 10MHz, P OUT = 0dBm −78 dBc Equivalent Input Noise VN Non-Inverting Voltage >1MHz 3.4 nV/ NICN Inverting Current >1MHz 10 pA/ ICN Non-Inverting Current >1MHz 1.2 pA/ Static, DC Performance V IO Output Offset Voltage ±0.2 ±6 ±8 mV DVIO Average Drift 8 µV/˚C I BN Input Bias Current Non-Inverting ±1 ±10 ±15 µA DIBN Average Drift 4 nA/˚C www.national.com 2 |
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