© Semiconductor Components Industries, LLC, 2001

August, 2000 – Rev. 0

1

Publication Order Number:

MMSD103T1/D

MMSD103T1

Preferred Device

High Voltage Switching

Diode

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

VR

250

Vdc

Peak Forward Current

IF

200

mAdc

Peak Forward Surge Current

IFM(surge)

625

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Forward Power Dissipation,

FR–5 Board (Note 1.) @ TA = 25°C

Derate above 25

°C

PF

400

3.2

mW

mW/

°C

Thermal Resistance,

Junction to Case

R

θJL

174

°C/W

Thermal Resistance,

Junction to Ambient

R

θJA

492

°C/W

Junction Temperature

TJ

125 Max

°C

Storage Temperature Range

Tstg

–55 to +150

°C

1. FR–5 = 1.0

 0.75  0.062 in.

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 200 Vdc)

(VR = 200 Vdc, TJ = 150°C)

IR

—

—

1.0

100

µAdc

Reverse Breakdown Voltage

(IBR = 100 µAdc)

V(BR)

250

—

Vdc

Forward Voltage

(IF = 100 mAdc)

(IF = 200 mAdc)

VF

—

—

1000

1250

mV

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

—

5.0

pF

Reverse Recovery Time

(IF = IR = 30 mAdc, RL = 100 Ω)

trr

—

50

ns

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

MMSD103T1

SOD–123

3000 / Tape & Reel

MARKING

DIAGRAM

CASE 425–04, STYLE 1

SOD–123

1

2

1

Cathode

2

Anode

JS

JS = Specific Device Code